| PART |
Description |
Maker |
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| NESG3400M01 NESG3400M01-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
| SGA-7489 |
DC-3000 MHZ SILICON GERMANIUM
|
Electronic Theatre Controls, Inc.
ETC
Stanford Microdevices
|
| NESG3032M14-T3-A NESG3032M14-A |
NPN SILICON GERMANIUM RF TRANSISTOR
|
California Eastern Laboratories
|
| BFP740FE6327 BFP740F07 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| BF776 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFP740F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFR740L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFU730LX-15 BFU730LX |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU710F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BGT24AT2 |
Silicon Germanium 24 GHz Transmitter MMIC
|
Infineon Technologies A...
|
| Q60103-X151-D Q60103-X151-F1 Q60103-X151-G Q60103- |
24 V, 200 mA, PNP germanium transistor
PNP GERMANIUM TRANSISTORS 进步党锗晶体
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Siemens Semiconductor G...
|
